白郭敏,梁焰,曾和平.基于国产InGaAs/InP APD的高速单光子探测[J].电子测量技术,2017,40(6):175-179
基于国产InGaAs/InP APD的高速单光子探测
High speed single photon detection based on domestic InGaAs/InP APD
  
DOI:
中文关键词:  单光子探测  正弦门  暗计数  后脉冲
英文关键词:single photon detection  sine gate  dark count rate  afterpulse
基金项目:
作者单位
白郭敏 上海理工大学光电信息与计算机工程学院上海200093 
梁焰 上海理工大学光电信息与计算机工程学院上海200093 
曾和平 上海理工大学光电信息与计算机工程学院上海200093 
AuthorInstitution
Bai Guomin School of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093,China 
Liang Yan School of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093,China 
Zeng Heping School of Optical Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093,China 
摘要点击次数: 928
全文下载次数: 867
中文摘要:
      InGaAs/InP雪崩光电二极管 (InGaAs/InP APD)是近红外单光子探测器的核心器件之一,其国产化已成为趋势。InGaAs/InP APD工作于1.25 GHz门控盖革模式下,由于APD本身的电容特性,单光子触发产生的雪崩电信号被尖峰噪声所湮没,采用低通滤波的方法可以将有效雪崩信号从尖峰噪声提取出来。为了探讨国产APD的参数水平,对不同温度不同探测效率下国产 InGaAs/InP APD的暗计数及后脉冲概率,时间抖动性等相关性能参数进行了测量,并与国外数据进行了对比。当国产InGaAs/InP APD工作于-25 ℃,探测效率10 % 时,暗计数可低至 9.9×10-7 /gate,后脉冲仅为1.5 %,这表明在 InGaAs/InP APD这一领域,我国已接近国外水平,但仍有一定的进步空间。
英文摘要:
      The InGaAs/InP avalanche photodiode (InGaAs/InP APD) has been one of the core devices for single photon detection at the near infrared wavelengths. The localization of the single photon detection has become a trend. The 1.25 GHz sine wave as the gating pulse was applied to the InGaAs/InP APD in Geiger model. Due to the capacitive response of the APD itself, The generated avalanche signal triggered by the single photon was buried in the spike noise. By using the low pass filter method, we can extract the effective avalanche signal from the peak noise. In order to explore the performances of the domestic InGaAs/InP APD, we measured the related parameters of the domestic at different temperatures and different detection efficiencies, such as dark count rates, afterpulse probability, timing jitter,and we compared the parameters with the imported APDs’. When the domestic InGaAs/InP APD worked in -25 ℃ and the detection efficiency at 10%, the dark count can be as low as 9.9×10-7 /gate, the afterpulse is only 1.5%.From this, we could conclude that the research of the domestic InGaAs/InP APD is close to the foreign level, but there is still room for the improvement.
查看全文  查看/发表评论  下载PDF阅读器