浅析集成电路辐射抗扰度测试方法
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北京航空航天大学 可靠性与系统工程学院 北京 100191

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TN407

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Review of radiated immunity measurement methods for integrated circuits
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School of Reliability and Systems Engineering, Beihang University, Beijing 100191, China

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    摘要:

    集成电路的辐射抗扰度测试问题,已经成为限制电子设备性能的主要因素。目前集成电路的辐射抗扰度测试方法主要包括横电磁波小室法、吉赫兹横电磁波小室法、IC带状线法和近场扫描抗扰度法,但如何选用这些方法是一大难点,而随着干扰源频率范围扩大至GHz乃至数十GHz,现有的部分测试方法也暴露出诸多问题。本文从方法特点和测试配置两个方面对四种IC辐射抗扰度测试方法进行了阐述,并总结归纳了从测试配置到调整测试条件在内的一系列集成电路辐射抗扰度测试步骤,从频率范围、干扰场强、测试成本等方面对测试方法进行了对比分析。文中列举了各测试方法存在的典型问题及改进措施,最后提出了测试方法的三条选用原则,并给出了选用建议。本文可为测试人员提供参考,研究成果可用于集成电路辐射抗扰度测试的选用和改进工作。

    Abstract:

    The radiated immunity measurement of ICs has become a major factor limiting the performance of electronic equipment. Up to now, the radiated immunity measurement methods of IC mainly include TEM cell method, GTEM cell method, IC stripline method and near-field scanning immunity method, but how to choose these methods is a dilemma. Moreover, with increasing frequency spectrum of disturbance sources to GHz range, some methods present their problems as well. In aspects of test set-up and pros, four IC radiated immunity measurement methods are described in this paper, with their frequency range, interference field strength and cost compared and analyzed. From test set-up to adjustment of test condition, the whole steps of IC radiated immunity measurement are induced. In addition, the key problems and solutions of the four methods are listed. Finally, this paper puts forward the principles and suggestions for methods selection. Being the reference for testers, the research results can be used for the selection and improvement of IC Radiated Immunity measurement.

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林辰正,高成,黄姣英.浅析集成电路辐射抗扰度测试方法[J].电子测量技术,2021,44(14):51-58

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  • 在线发布日期: 2024-09-05
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