Zhang Tong
1.State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China; 2.Beijing Engineering Research Center of Highreliability IC with Power Industrial Grade, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, ChinaZhou Zhimei
1.State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China; 2.Beijing Engineering Research Center of Highreliability IC with Power Industrial Grade, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, ChinaZhao Dongyan
1.State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China; 2.Beijing Engineering Research Center of Highreliability IC with Power Industrial Grade, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, ChinaZhang Haifeng
1.State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China; 2.Beijing Engineering Research Center of Highreliability IC with Power Industrial Grade, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China1.State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China; 2.Beijing Engineering Research Center of Highreliability IC with Power Industrial Grade, Beijing SmartChip Microelectronics Technology Co. Ltd., Beijing 100192, China
TN402