Silicon based reduced graphene oxide RTD temperature sensor
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Affiliation:

1.Key Laboratory of Instrumentation Science & Dynamic Measurement (North University of China), Ministry of Education, Taiyuan 030051,China;2.Northern Automatic Control TechnologyInstitute , Taiyuan 030006, China

Clc Number:

TP212

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    Abstract:

    In response to the problem of low sensitivity and unstable performance of traditional platinum resistance, metal and other temperature sensors, this paper selects a new nanomaterial reduced graphene oxide as the temperature-sensitive material, preparation of forked-finger electrode thermistors using mems process. The reduced graphene oxide morphology was described by scanning electron microscopy (SEM), and a test system was built to test its capabilities. The results show that the resistance of the sensor decreases with increasing temperature in the region of 30°C to 210°C. The sensitivity of the sensor is about 85.97 Ω/°C, the linearity is up to 0.98049, while it has a very small hysteresis and good stability.

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  • Online: July 02,2024
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